Molded Interconnects Device

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Injection molded microfluidic chips featuring integrated interconnects.

An injection molding process for the fabrication of disposable plastic microfluidic chips with a cycle time of 2 min has been designed, developed, and implemented. Of the sixteen commercially available grades of cyclo-olefin copolymer (COC) that were screened for autofluorescence and transparency to ultraviolet (UV) light, Topas 8007 x 10 was identified as the most suitable for production. A ro...

متن کامل

Device Considerations for Nanophotonic CMOS Global Interconnects

— We introduce an analytical framework to understand the path for scaling nanophotonic interconnects to meet the energy and footprint requirements of CMOS global interconnects. We derive the device requirements for sub 100 fJ/cm/bit interconnects including tuning power, serialization-deserialization energy, and optical insertion losses. Using CMOS with integrated nanophotonics as an example pla...

متن کامل

An Injection-Molded Device for Purification of Nucleic Acids From Whole Blood Using Isotachophoresis

We present a novel microchip device for purification of nucleic acids from 25 μL biological samples using isotachophoresis (ITP). The device design incorporates a custom capillary barrier structure to facilitate robust sample loading. The chip uses relatively large channel dimensions to reduce processing time, minimize Joule heating, and achieve high extraction efficiency. To reduce pH changes ...

متن کامل

Hard-molded 51 cm long waveguide array with a 150 GHz bandwidth for board-level optical interconnects.

We demonstrated a 51 cm long waveguide array on a poly(methyl methacrylate) sheet fabricated by silicon hard-molding technology. To reduce the silicon sidewall roughness, a wet-oxidation followed by a buffered oxidation etchant etching process is adopted, achieving a surface roughness of 1.2 nm. The waveguide obtained a total insertion loss of -15.1 dB and an adjacent channel cross talk below -...

متن کامل

Device-Level Simulation of Wave Propagation Along Metal–Insulator–Semiconductor Interconnects

A device-level simulation is presented for studying wave propagation along metal–insulator–semiconductor interconnects. A set of nonlinear equations is first formulated by combining the motion equations of charged carriers and Maxwell’s equations. The set of nonlinear equations is then transformed into the frequency domain, which leads to sets of nonlinear equations for the fundamental mode and...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Kobunshi

سال: 2001

ISSN: 0454-1138,2185-9825

DOI: 10.1295/kobunshi.50.847